ElectroChemical Jet Machining of Titanium: Overcoming Passivation Layers with Ultrasonic Assistance

Laser Drilling Assisted with Jet Electrochemical Machining

An investigation into the machining characteristics of titanium using ultrasonic machining

This paper presents a review on the problems encountered in machining titanium and application of USM in machining titanium and its alloys. Experiments have been conducted to assess the effect of three factors-tool material, grit size of the abrasive slurry and power rating of ultrasonic machine on machining characteristics of titanium (ASTM Grade I) using full factorial approach for design and...

An Experimental Study on Ultrasonic Machining of Pure Titanium Using Designed Experiments

In the present research work, the effect of several process parameters on the machining characteristics of pure titanium (ASTM Grade-I) has been reported. The machining characteristics that are being investigated are tool wear rate and the quality of the machined surface in terms of the surface finish. The mechanism of material removal was has also been correlated with the machining conditions....

Pyrite Passivation by Triethylenetetramine: An Electrochemical Study

The potential of triethylenetetramine (TETA) to inhibit the oxidation of pyrite in H(2)SO(4) solution had been investigated by using the open-circuit potential (OCP), cyclic voltammetry (CV), potentiodynamic polarization, and electrochemical impedance (EIS), respectively. Experimental results indicate that TETA is an efficient coating agent in preventing the oxidation of pyrite and that the inh...

Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...